PHYSICS /BK21 Colloquium (08/03/14)
관련링크
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"What is Candidate for the Next Generation Semiconductor Device ?
연사: 강태원 교수[동국대]
일시: 2008 년 3 월 14 일 오후 3시
장소: 무은재 기념관 307호 (멀티미디어 강의실)
ABSTRACT:
When the ratio of semiconductor device integration increases, it is obvious that the size of semiconductor devices should decrease. Since there must be a limit of size reduction due to quantum effects, the existing semiconductor design rule will not work anymore in the future. It is the research goal of Quantum Functional Semiconductor Research Center (QSRC) to provide new quantum functional devices to overcome these future complications in the semiconductor field. The research goal is to develop new quantum-functional materials which exceed the existing limit in semiconductor physics and to achieve new concept of quantum structures and devices in order to give directions to the mesoscopic physical phenomena, quantum characteristics and device physics. All these will be based on the new concept of quantum computers and artificial intelligence and are expected to change the paradigm of the future information society.
Nonvolatile memory devices using ferroelectric properties are known well as FeRAM. However, it is true that interface between film and substrate is rough because properties of PZT or BST showing ferroelectricity in FeRAM are different from that of Si substrate and the integration is limited owing to complex structures. Our research members found ferroelectric semiconductor properties and found that the resistance switches between two different states depending on the poling of dipole moment. We suggested that complex structure consisted of two transistors and two capacitor (or 1Tr and 1 C) which is a base element of FeRAM device. The FeRAM can be replaced by nonvolatile memory device structures that use resistance.
Most research subject about DMS research field is DMS structure or material research to achieve Curie temperature above room temperature. Second research subject is spin devices (for example, Spin Field Effect Transistor: SFET). However, Spin-FET that Das-Datta proposes is not realized due to problem with spin injection, spin polarization ratio and Rashba effect, etc. At QSRC, DMS related researchers achieved the following results. First, InMnAs Quantum dots and GaMnAs Nanowires were grown by MBE. These were grown as single crystal having semiconducting properties and ferromagnetic properties as confirmed by High Resolution Transmission Electron Microscopy (HRTEM), Near-field Scanning Optical Microscopy (NSOM), Superconducting Quantum Interference Device (SQUID).
One-dimensional structures (nanowires or nano-rods) are well known to have great prospects in fundamental physical science and novel technological applications. Especially, the group III-nitride wide band gap semiconductors have attracted much attention due to many important applications, such as blue/UV light emitting diodes (LEDs), laser diodes (LDs), and high-temperature/high-power electronic devices. The fabrication of a p-n junction diode has been a key technology in realizing the devices.
문의처: 이후종(054-279-2072, hjlee@postech.ac.kr)
"
연사: 강태원 교수[동국대]
일시: 2008 년 3 월 14 일 오후 3시
장소: 무은재 기념관 307호 (멀티미디어 강의실)
ABSTRACT:
When the ratio of semiconductor device integration increases, it is obvious that the size of semiconductor devices should decrease. Since there must be a limit of size reduction due to quantum effects, the existing semiconductor design rule will not work anymore in the future. It is the research goal of Quantum Functional Semiconductor Research Center (QSRC) to provide new quantum functional devices to overcome these future complications in the semiconductor field. The research goal is to develop new quantum-functional materials which exceed the existing limit in semiconductor physics and to achieve new concept of quantum structures and devices in order to give directions to the mesoscopic physical phenomena, quantum characteristics and device physics. All these will be based on the new concept of quantum computers and artificial intelligence and are expected to change the paradigm of the future information society.
Nonvolatile memory devices using ferroelectric properties are known well as FeRAM. However, it is true that interface between film and substrate is rough because properties of PZT or BST showing ferroelectricity in FeRAM are different from that of Si substrate and the integration is limited owing to complex structures. Our research members found ferroelectric semiconductor properties and found that the resistance switches between two different states depending on the poling of dipole moment. We suggested that complex structure consisted of two transistors and two capacitor (or 1Tr and 1 C) which is a base element of FeRAM device. The FeRAM can be replaced by nonvolatile memory device structures that use resistance.
Most research subject about DMS research field is DMS structure or material research to achieve Curie temperature above room temperature. Second research subject is spin devices (for example, Spin Field Effect Transistor: SFET). However, Spin-FET that Das-Datta proposes is not realized due to problem with spin injection, spin polarization ratio and Rashba effect, etc. At QSRC, DMS related researchers achieved the following results. First, InMnAs Quantum dots and GaMnAs Nanowires were grown by MBE. These were grown as single crystal having semiconducting properties and ferromagnetic properties as confirmed by High Resolution Transmission Electron Microscopy (HRTEM), Near-field Scanning Optical Microscopy (NSOM), Superconducting Quantum Interference Device (SQUID).
One-dimensional structures (nanowires or nano-rods) are well known to have great prospects in fundamental physical science and novel technological applications. Especially, the group III-nitride wide band gap semiconductors have attracted much attention due to many important applications, such as blue/UV light emitting diodes (LEDs), laser diodes (LDs), and high-temperature/high-power electronic devices. The fabrication of a p-n junction diode has been a key technology in realizing the devices.
문의처: 이후종(054-279-2072, hjlee@postech.ac.kr)
"
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